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• W4225510835 abstract "Vertically nano-laminated InO x and GaZnO y semiconductors exhibited excellent controllability of electron carriers in TFTs via PEALD methods." @default.
• W4225510835 created "2022-05-05" @default.
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• W4225510835 date "2022-01-01" @default.
• W4225510835 modified "2023-10-18" @default.
• W4225510835 title "Plasma-enhanced atomic-layer deposition of active layers of nanolaminated (InO_<i>x</i>)_n(GaZnO_<i>y</i>)_m for thin-film transistors" @default.
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• W4225510835 doi "https://doi.org/10.1039/d1tc06050c" @default.
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