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• W4225518624 abstract "For the first time, we propose a stackable vertical channel-all-around (CAA) In&#x2013;Ga&#x2013;Zn-O field-effect transistor (IGZO FET) for high-density 4F² and long-retention 2T0C dynamic random access memory (DRAM) application. The device is fabricated in a back-end-of-line (BEOL) compatible process flow where the channel and gate-stack are deposited by plasma-enhanced atomic layer deposition (PEALD). The impact of IGZO cycle ratio and plasma power on the device&#x2019;s electrical performance is studied. An optimized 50-nm channel-length CAA IGZO FET achieved <inline-formula> <tex-math notation=LaTeX>${I}_{ mathrm{scriptscriptstyle ON}} > 30 ~mu text{A}/mu text{m}$ </tex-math></inline-formula> and <inline-formula> <tex-math notation=LaTeX>${I}_{ mathrm{scriptscriptstyle OFF}}$ </tex-math></inline-formula> below <inline-formula> <tex-math notation=LaTeX>$1.8times10$ </tex-math></inline-formula>^&#x2212;17 <inline-formula> <tex-math notation=LaTeX>$mu text{A}/mu text{m}$ </tex-math></inline-formula> at <inline-formula> <tex-math notation=LaTeX>${V}_{text {DS}} = 1$ </tex-math></inline-formula> V. A long retention of 300 s has been experimentally verified for the CAA IGZO 2T0C bit cell, making it a potential candidate for low-power 2T0C DRAM with ultralow refresh frequency. Finally, by monolithically stacking the vertical CAA IGZO FETs with 130-nm critical dimension (CD) to form 2T0C bit cells, we demonstrate the feasibility of the proposed BEOL-compatible 2T0C DRAM for further density scaling beyond 4F²." @default.
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• W4225518624 date "2022-04-01" @default.
• W4225518624 modified "2023-10-17" @default.
• W4225518624 title "Novel Vertical Channel-All-Around (CAA) In-Ga-Zn-O FET for 2T0C-DRAM With High Density Beyond 4F² by Monolithic Stacking" @default.
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• W4225518624 doi "https://doi.org/10.1109/ted.2022.3154693" @default.
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