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• W4225550226 abstract "The effect of stack engineering of HfO_x/ Al-doped HfO_x(Al:HfO_x)-based flexible resistive random access memory (ReRAM) devices including its synaptic characteristic has been investigated. The flexible Al/HfO_x/Al:HfO_x/HfO_x/ITO/PET resistive memory device shows outstanding switching performance in terms of repeatability, statistical variation of parameters even in bending condition up to 5 mm. The switching mechanism has been explained by ohmic conduction in low resistance state (LRS) and the trap-controlled space charge limited conduction (SCLC) in high resistance state (HRS). The improved synaptic characteristics, such as long-term potentiation (LTP), long-term depression (LTD), spike-rate-dependent plasticity (SRDP), paired-pulse facilitation (PPF), and post-tetanic potentiation (PTP), are effectively mimicked with Al/HfO_x/Al:HfO_x/ITO/PET ReRAM, which is suitable for neuromorphic computing application." @default.
• W4225550226 created "2022-05-05" @default.
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• W4225550226 date "2022-04-01" @default.
• W4225550226 modified "2023-10-02" @default.
• W4225550226 title "Impact of Stack Engineering on HfOₓ/Al:HfOₓ-Based Flexible Resistive Memory Devices and Its Synaptic Characteristics" @default.
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• W4225550226 doi "https://doi.org/10.1109/ted.2022.3153432" @default.
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