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• W4225568689 abstract "Recessed-gate <inline-formula> <tex-math notation=LaTeX>$beta $ </tex-math></inline-formula>-gallium oxide (Ga₂O₃) MOSFETs on the heterogeneous Ga₂O₃-on-SiC (GaOSiC) wafer are fabricated and characterized. The GaOSiC transistors with an <inline-formula> <tex-math notation=LaTeX>${L}_{mathrm {SD}}$ </tex-math></inline-formula> of <inline-formula> <tex-math notation=LaTeX>$11~{mu } text{m}$ </tex-math></inline-formula> exhibit the decent and stable electrical characteristics with the temperature varying from 25 &#x00B0;C to 200 &#x00B0;C, including a breakdown voltage (<inline-formula> <tex-math notation=LaTeX>${V}_{mathrm {br}}$ </tex-math></inline-formula>) of 1000 V, a specific ON-resistance (<inline-formula> <tex-math notation=LaTeX>${R}_{mathrm{scriptscriptstyle ON},mathrm {sp}}$ </tex-math></inline-formula>) of &#x007E;100 m <inline-formula> <tex-math notation=LaTeX>${Omega }~cdot $ </tex-math></inline-formula> cm², a drive current of 91 mA/mm, and a power figure of merit (P-FOM) of &#x007E;100 MW/cm². Characterization of the transfer length method (TLM) structure fabricated on the same heterogeneous wafer demonstrates that the reduced transfer length (<inline-formula> <tex-math notation=LaTeX>${L}_{T}$ </tex-math></inline-formula>) at the <inline-formula> <tex-math notation=LaTeX>$beta $ </tex-math></inline-formula>-Ga₂O₃/Ti/Au contact interface compensates for the increased sheet resistance (<inline-formula> <tex-math notation=LaTeX>${R}_{mathrm {SH}}$ </tex-math></inline-formula>) of <inline-formula> <tex-math notation=LaTeX>$beta $ </tex-math></inline-formula>-Ga₂O₃ film at the elevated temperature, which leads to the stable electrical performance of the GaOSiC devices." @default.
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• W4225568689 date "2022-04-01" @default.
• W4225568689 modified "2023-10-18" @default.
• W4225568689 title "Recessed-Gate Ga₂O₃-on-SiC MOSFETs Demonstrating a Stable Power Figure of Merit of 100 mW/cm² Up to 200 °C" @default.
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• W4225568689 doi "https://doi.org/10.1109/ted.2022.3154340" @default.
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