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• W4226098348 abstract "This letter demonstrates high-performance lateral p-GaN/AlGaN/GaN hybrid anode diodes (HPT-HADs) using a novel hydrogen plasma treatment. Without field plates (FPs) or passivation, the HPT-HAD with anode-cathode distance (<inline-formula> <tex-math notation=LaTeX>${L}_{text {AC}}$ </tex-math></inline-formula>) of 20 <inline-formula> <tex-math notation=LaTeX>$mu text{m}$ </tex-math></inline-formula> showed reverse breakdown voltage (<i>BV</i>) of 2.01 kV with differential specific ON-resistance (<inline-formula> <tex-math notation=LaTeX>${R}_{text {ON,sp}}$ </tex-math></inline-formula>) of 2.09 <inline-formula> <tex-math notation=LaTeX>$text{m}Omega cdot $ </tex-math></inline-formula>cm² and power figure-of-merit (FOM) of 1.93 GW/cm². Moreover, the device also exhibited excellent rectifying behaviors with an output current density of 598 mA/mm, an <inline-formula> <tex-math notation=LaTeX>${I}_{text {ON}}/{I}_{text {OFF}}$ </tex-math></inline-formula> ratio of <inline-formula> <tex-math notation=LaTeX>$sim 10^{{10}}$ </tex-math></inline-formula>, an ideality factor (<inline-formula> <tex-math notation=LaTeX>$eta$ </tex-math></inline-formula>) of 1.04, and a turn-on voltage (<inline-formula> <tex-math notation=LaTeX>${V}_{text {T}}$ </tex-math></inline-formula>) of 1.3 V. The devices also had a negligible hysteresis due to the hydrogenated p-GaN cap layer and the low-damage plasma treatment. The p-GaN/AlGaN/GaN HAD anodes are promising for next-generation high-voltage power electronics." @default.
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• W4226098348 date "2022-05-01" @default.
• W4226098348 modified "2023-10-12" @default.
• W4226098348 title "2.0 kV/2.1 mΩ·cm² Lateral p-GaN/AlGaN/GaN Hybrid Anode Diodes With Hydrogen Plasma Treatment" @default.
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• W4226098348 doi "https://doi.org/10.1109/led.2022.3159240" @default.
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