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• W4226134409 abstract "In this article, the effect of the various processing steps during the fabrication of c-Si/SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> /SiC <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> fired passivating contacts on the silicon bulk lifetime is studied, and the kinetics of defect deactivation by hydrogenation is investigated. It is found that the firing step at 800 °C induces shallow bulk defects in float-zone silicon wafers, which can subsequently be passivated with hydrogen provided by an a-SiN <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> :H/D reservoir layer upon annealing at 450 °C. Experimental results and numerical data treatment indicate a rapid passivation of the surface within less than 1 min, followed by a slower passivation of the shallow bulk defects. <italic xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>In situ</i> lifetime measurements are consistent with a slow bulk lifetime improvement by showing similar lifetime evolutions for both p-type and n-type SiC <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> layers. The kinetics of the hydrogenation process seems to be limited by the available hydrogen supply at the c-Si/SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> interface, rather than by its diffusion within the bulk of the wafer. Moreover, it is affected by the bulk doping as well as the SiC <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> layer thickness. Finally, it is shown that hydrogenation is also possible with an a-SiN <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> :H/D reservoir layer deposited on one side of the wafer only, although resulting in a lower passivation level ( <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink><tex-math notation=LaTeX>${{boldsymbol{tau }}_{mathbf{eff}}}$</tex-math></inline-formula> ∼700 <italic xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>μ</i> s compared to <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink><tex-math notation=LaTeX>${{boldsymbol{tau }}_{mathbf{eff}}}$</tex-math></inline-formula> ∼1300 <italic xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>μ</i> s for symmetrical samples), and slower kinetics ( <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink><tex-math notation=LaTeX>${{boldsymbol{tau }}_{mathbf{reac}}}$</tex-math></inline-formula> ∼5 min comparedto <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink><tex-math notation=LaTeX>${{boldsymbol{tau }}_{mathbf{reac}}}$</tex-math></inline-formula> ∼0.8 min)." @default.
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• W4226134409 date "2022-05-01" @default.
• W4226134409 modified "2023-09-30" @default.
• W4226134409 title "Bulk Defects and Hydrogenation Kinetics in Crystalline Silicon Solar Cells With Fired Passivating Contacts" @default.
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• W4226134409 doi "https://doi.org/10.1109/jphotov.2022.3161871" @default.
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