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- W4226243495 abstract "Gallium Nitride Cylindrical Schottky Barrier MOSFET(GaN-CSB-MOSFET) using Aluminium Oxide (Al<inf>2</inf>O<inf>3</inf>) as gate oxide have been simulated and examined. The GaN-based system offers wider bandgaps, good transport properties, and a high breakdown field. The proposed devices display a minimum subthreshold slope (SS) of 67 mV/dec and a lower threshold voltage. Parameters like <tex>$mathrm{V}_{text{ds}}, mathrm{g}_{mathrm{m}}, mathrm{g}_{mathrm{d}}, mathrm{f}_{mathrm{T}}, mathrm{C}_{text{GG}}$</tex>, UPG, MTPG, and FTP show better results in GaN-CSB-MOSFET than Silicon Cylindrical Schottky barrier (Si-CSB) MOSFET. These performance metrics make GaN-CSB-MOSFET a promising contender for evolving low-power applications, such as sensors and RF for the Internet of Things." @default.
- W4226243495 created "2022-05-05" @default.
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- W4226243495 date "2021-12-22" @default.
- W4226243495 modified "2023-10-16" @default.
- W4226243495 title "Gallium Nitride Cylindrical Schottky Barrier MOSFET(GaN-CSB-MOSFET) For High-Frequency Implementation" @default.
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- W4226243495 doi "https://doi.org/10.1109/iciera53202.2021.9726743" @default.
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