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- W4226248078 abstract "Copper chemical mechanical polishing (Cu CMP) is a critical process in the fabrication of high performance microprocessors and other advanced memory devices. It was implemented in manufacturing at the 0.27 μm technology node and has been steadily evolving as interconnect scaling continued at a rapid pace during the past decades. In the next 5 years, as device dimensions continue to shrink approaching molecular dimensions, Cu CMP will face formidable challenges. These challenges arise from the material and process-related changes associated with interconnect scaling. The impact of these changes on Cu CMP is examined in detail. In addition, defectivity, metrology, and process control also become extremely challenging because of the difficulties associated with the accuracy and precision in measurements at extremely small dimensions with existing techniques. It is conceivable that technical advancements can provide excellent solutions to these challenges. However, manufacturing implementation of highly sophisticated and advanced techniques and process enhancements without increasing the cost may be the biggest challenge." @default.
- W4226248078 created "2022-05-05" @default.
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- W4226248078 date "2022-01-01" @default.
- W4226248078 modified "2023-09-27" @default.
- W4226248078 title "Copper chemical mechanical planarization (Cu CMP) challenges in 22 nm back-end-of-line (BEOL) and beyond" @default.
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- W4226248078 doi "https://doi.org/10.1016/b978-0-12-821791-7.00016-2" @default.
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