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• W4226256989 abstract "In this article, high-performance vertical gallium nitride (GaN)-on-GaN Schottky barrier diodes (SBDs) with helium (He)-implanted edge termination (ET) structure were demonstrated for the first time. Owing to the feature of He-implanted ET structure, the peak electric field crowding effect underneath the Schottky contact metal edge has been significantly reduced, thus increasing the breakdown voltage <inline-formula> <tex-math notation=LaTeX>${V}_{{mathrm {BR}}}$ </tex-math></inline-formula> of the diodes. Under the same testing conditions, <inline-formula> <tex-math notation=LaTeX>${V}_{{mathrm {BR}}}$ </tex-math></inline-formula> was increased from 862 to 1725 V for the devices with He-implanted ET structure, which also have low specific differential ON-resistance <inline-formula> <tex-math notation=LaTeX>${R}_{{scriptscriptstyle {mathrm {ON}}}}$ </tex-math></inline-formula> of 5.1 <inline-formula> <tex-math notation=LaTeX>$text{m}Omega cdot {mathrm {cm}}^{2}$ </tex-math></inline-formula> and low turn-on voltage <inline-formula> <tex-math notation=LaTeX>${V}_{{scriptscriptstyle {mathrm {ON}}}}$ </tex-math></inline-formula> of 0.63 V. Given <inline-formula> <tex-math notation=LaTeX>${V}_{{scriptscriptstyle {mathrm {ON}}}}$ </tex-math></inline-formula> of &#x003C; 0.7 V, the vertical GaN SBDs with He-implanted ET structure show the highest <inline-formula> <tex-math notation=LaTeX>${V}_{{mathrm {BR}}}$ </tex-math></inline-formula> in the reported work up to today." @default.
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• W4226256989 date "2022-04-01" @default.
• W4226256989 modified "2023-10-18" @default.
• W4226256989 title "1.7-kV Vertical GaN-on-GaN Schottky Barrier Diodes With Helium-Implanted Edge Termination" @default.
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• W4226256989 doi "https://doi.org/10.1109/ted.2022.3153594" @default.
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