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• W4229069861 endingPage "153506" @default.
• W4229069861 startingPage "153506" @default.
• W4229069861 abstract "• A novel surface cleaning and passivation method is demonstrated for semiconductor devices with AlGaAs-containing facet structure. • The removal of surface states was implemented by Ar-plasma cleaning and passivated by ZnO films. • The method is applied to semiconductor lasers with comprehensive optimization, material characterization, device testing, and reliability results. • We demonstrated 21 W laser output power and reliable operation by utilizing this method. Passivation of dangling bonds at the cleaved mirror facet and its durability are fundamental features of semiconductor lasers to obtain reliable operation with a long device lifetime. The high non-radiative recombination activity of the surface states needs to be controlled to prevent the Fermi level pinning before the deposition of mirror coating materials. Here, we report the incorporation of plasma cleaning of the facet and ZnO film as a passivation layer for the fabrication of high-power semiconductor lasers. The Argon plasma cleaning process was investigated to eliminate surface contamination without damaging the cavity surface. The ZnO passivation films were systematically studied by varying the chamber pressure and sputtering power of the radio frequency (RF) sputter coating process. We obtained homogeneous and dense ZnO films with high surface quality and optical absorption coefficient of zero. By incorporating the optimum plasma cleaning and passivation layer parameters, GaAs-based laser devices with significantly improved catastrophic optical mirror damage (COMD) power were achieved. COMD threshold was increased from 11.9 W to 20.7 W. The life test results demonstrate no failure for facet cleaned and passivated devices for more than 500 h, confirming the long-term effectiveness of the process for actual device integration." @default.
• W4229069861 created "2022-05-08" @default.
• W4229069861 creator A5011208960 @default.
• W4229069861 creator A5027153052 @default.
• W4229069861 creator A5041630113 @default.
• W4229069861 creator A5076181696 @default.
• W4229069861 creator A5088103689 @default.
• W4229069861 date "2022-09-01" @default.
• W4229069861 modified "2023-09-24" @default.
• W4229069861 title "Facet passivation process of high-power laser diodes by plasma cleaning and ZnO film" @default.
• W4229069861 cites W1566566392 @default.
• W4229069861 cites W1616144679 @default.
• W4229069861 cites W1966212160 @default.
• W4229069861 cites W1966301514 @default.
• W4229069861 cites W1967652077 @default.
• W4229069861 cites W1977409510 @default.
• W4229069861 cites W1979707621 @default.
• W4229069861 cites W1982053128 @default.
• W4229069861 cites W1986945387 @default.
• W4229069861 cites W1992485116 @default.
• W4229069861 cites W2002105379 @default.
• W4229069861 cites W2016804957 @default.
• W4229069861 cites W2018063219 @default.
• W4229069861 cites W2037473570 @default.
• W4229069861 cites W2038181803 @default.
• W4229069861 cites W2052446944 @default.
• W4229069861 cites W2054827439 @default.
• W4229069861 cites W2055561746 @default.
• W4229069861 cites W2071056973 @default.
• W4229069861 cites W2074794162 @default.
• W4229069861 cites W2091471005 @default.
• W4229069861 cites W2109146548 @default.
• W4229069861 cites W2112354889 @default.
• W4229069861 cites W2114380128 @default.
• W4229069861 cites W2152085841 @default.
• W4229069861 cites W2161247351 @default.
• W4229069861 cites W2222048593 @default.
• W4229069861 cites W2314474494 @default.
• W4229069861 cites W2461668990 @default.
• W4229069861 cites W2505862247 @default.
• W4229069861 cites W2772407965 @default.
• W4229069861 cites W2802311518 @default.
• W4229069861 cites W2803440492 @default.
• W4229069861 cites W2902380512 @default.
• W4229069861 cites W2919134558 @default.
• W4229069861 cites W2988955482 @default.
• W4229069861 cites W3157221037 @default.
• W4229069861 cites W3199918802 @default.
• W4229069861 cites W2058323987 @default.
• W4229069861 doi "https://doi.org/10.1016/j.apsusc.2022.153506" @default.
• W4229069861 hasPublicationYear "2022" @default.
• W4229069861 type Work @default.
• W4229069861 citedByCount "3" @default.
• W4229069861 countsByYear W42290698612022 @default.
• W4229069861 countsByYear W42290698612023 @default.
• W4229069861 crossrefType "journal-article" @default.
• W4229069861 hasAuthorship W4229069861A5011208960 @default.
• W4229069861 hasAuthorship W4229069861A5027153052 @default.
• W4229069861 hasAuthorship W4229069861A5041630113 @default.
• W4229069861 hasAuthorship W4229069861A5076181696 @default.
• W4229069861 hasAuthorship W4229069861A5088103689 @default.
• W4229069861 hasConcept C111919701 @default.
• W4229069861 hasConcept C120665830 @default.
• W4229069861 hasConcept C121332964 @default.
• W4229069861 hasConcept C127413603 @default.
• W4229069861 hasConcept C15744967 @default.
• W4229069861 hasConcept C163258240 @default.
• W4229069861 hasConcept C171250308 @default.
• W4229069861 hasConcept C187288502 @default.
• W4229069861 hasConcept C192562407 @default.
• W4229069861 hasConcept C2779227376 @default.
• W4229069861 hasConcept C2865642 @default.
• W4229069861 hasConcept C33574316 @default.
• W4229069861 hasConcept C41008148 @default.
• W4229069861 hasConcept C43122875 @default.
• W4229069861 hasConcept C49040817 @default.
• W4229069861 hasConcept C520434653 @default.
• W4229069861 hasConcept C61696701 @default.
• W4229069861 hasConcept C62520636 @default.
• W4229069861 hasConcept C77805123 @default.
• W4229069861 hasConcept C78434282 @default.
• W4229069861 hasConcept C82706917 @default.
• W4229069861 hasConcept C98045186 @default.
• W4229069861 hasConceptScore W4229069861C111919701 @default.
• W4229069861 hasConceptScore W4229069861C120665830 @default.
• W4229069861 hasConceptScore W4229069861C121332964 @default.
• W4229069861 hasConceptScore W4229069861C127413603 @default.
• W4229069861 hasConceptScore W4229069861C15744967 @default.
• W4229069861 hasConceptScore W4229069861C163258240 @default.
• W4229069861 hasConceptScore W4229069861C171250308 @default.
• W4229069861 hasConceptScore W4229069861C187288502 @default.
• W4229069861 hasConceptScore W4229069861C192562407 @default.
• W4229069861 hasConceptScore W4229069861C2779227376 @default.
• W4229069861 hasConceptScore W4229069861C2865642 @default.
• W4229069861 hasConceptScore W4229069861C33574316 @default.
• W4229069861 hasConceptScore W4229069861C41008148 @default.
• W4229069861 hasConceptScore W4229069861C43122875 @default.
• W4229069861 hasConceptScore W4229069861C49040817 @default.

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