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• W4229455763 abstract "The homoepitaxial Si-doped Ga2O3 film prepared by metal–organic chemical vapor deposition (MOCVD) was reported in this paper. The film thickness reached 4.5 microns, a relatively high value for MOCVD. The full width at half maxima of the (002) diffraction plane of the film was 26.3 arcsec, thus showing high crystalline quality. The film showed n−-type properties with a doping concentration of 3.6 × 1016 cm−3 and electron mobility of 137 cm2/V·s. In addition, the element composition and stress state of the film were characterized and analyzed. This indicates that the MOCVD, supporting high-quality, high-precision epitaxy, is promising for Ga2O3 power devices." @default.
• W4229455763 created "2022-05-11" @default.
• W4229455763 creator A5003264960 @default.
• W4229455763 date "2022-05-09" @default.
• W4229455763 modified "2023-09-26" @default.
• W4229455763 title "Preparation of High-Thickness n−-Ga2O3 Film by MOCVD" @default.
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• W4229455763 doi "https://doi.org/10.3390/coatings12050645" @default.
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