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- W4229455870 abstract "MoS <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> is a typical two-dimensional (2D) semiconductor with extraordinary electrical properties, and has been intensively investigated as a channel material for field-effect transistors (FETs) and logic circuits in recent years. In this work, the top gated (TG) MoS <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> FETs are fabricated with wafer-scale uniformity, and several pivotal devices and circuits based on MoS <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> films are demonstrated, including current mirrors, inverter, and the AND/OR logic circuits. All devices exhibit reliable electrical characteristics, which lays the foundation for the future fabrication of large-scale MoS <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> circuits." @default.
- W4229455870 created "2022-05-11" @default.
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- W4229455870 date "2022-04-18" @default.
- W4229455870 modified "2023-09-27" @default.
- W4229455870 title "Analog and Logic Circuits Fabricated on a Wafer-Scale Two-Dimensional Semiconductor" @default.
- W4229455870 doi "https://doi.org/10.1109/vlsi-tsa54299.2022.9770978" @default.
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