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- W4229692784 abstract "A voltage polarity dependent, voltage-induced wetting transition is demonstrated using a liquid metal-oxide-semiconductor (MOS) junction. A droplet of mercury can be made to spread out on an oxidized silicon wafer upon the application of a voltage. The wetting is seen to depend on the doping type and doping density of the silicon—a voltage polarity related asymmetrical electrowetting is observed. Impedance measurements on Al-SiO2-Si MOS capacitors link the space-charge effects with the electrowetting on the Hg-SiO2-Si MOS junction. A modified Young-Lippmann equation for electrowetting at a MOS junction is derived—the model agrees with the experiments." @default.
- W4229692784 created "2022-05-11" @default.
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- W4229692784 date "2013-09-30" @default.
- W4229692784 modified "2023-10-16" @default.
- W4229692784 title "Electrowetting at a liquid metal-oxide-semiconductor junction" @default.
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- W4229692784 doi "https://doi.org/10.1063/1.4822308" @default.
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