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- W4230782012 abstract "Publisher SummaryThis chapter discusses few applications of the metal-semiconductor barriers in metal-oxide-semiconductor (MOS), bipolar, and metal–semiconductor field effect transistor (MESFET) digital integrated circuits (ICs). The chapter presents the research and development activities in the areas of device physics and processing. Insulated gate field-effect transistors using Schottky barriers for source and drain contacts were introduced to incorporate certain fabrication advantages offered by these devices. It was anticipated at the time that the elimination of the high-temperature source-drain diffusion steps would result in better quality oxides as well as improved control of the device parameters. Schottky barrier MOS (SBMOS) transistors can be fabricated using semiconductors, such as cadmium sulfide, where p-n junctions are difficult to form. With the advent of IC technology other properties of the SBMOS transistor have made it a possible candidate for implementation in complementary metal–oxide–semiconductor (CMOS) very-large-scale integration (VLSI) circuits." @default.
- W4230782012 created "2022-05-11" @default.
- W4230782012 date "1986-01-01" @default.
- W4230782012 modified "2023-09-26" @default.
- W4230782012 title "Metal–Semiconductor Devices" @default.
- W4230782012 doi "https://doi.org/10.1016/b978-0-12-234113-7.50013-x" @default.
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