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- W4230906543 abstract "The cathodoluminescence (CL) technique is frequently used to study semiconductor materials. The quantitative determination of material parameters requires an accurate simulation of the CL signal as a function of electron beam parameters (i.e. intensity Ip, energy E0). The free surface of a semiconductor can be described by a defect density Nt, which induces localised electron states Et in the band gap. The surface is generally charged, which induces a band bending near the surface. Hence, a potential barrier Eb is formed across a space-charge region. The electric field E in this region causes the carriers to drift towards the surface and enhances their recombination. This latter is treated using the Shockley–Read–Hall theory. This paper deals with the case of n-GaAs, particularly the comparison between the numerical results of the model and experimental data obtained from the literature. A connection between the movement of the energy levels Et considered in this model and the surface recombination velocity Vs is established." @default.
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- W4230906543 date "2002-05-01" @default.
- W4230906543 modified "2023-10-03" @default.
- W4230906543 title "Cathodoluminescence Calculation of n-GaAs. Surface Analysis and Comparison" @default.
- W4230906543 doi "https://doi.org/10.1002/1521-396x(200205)191:1<223::aid-pssa223>3.3.co;2-y" @default.
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