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- W4230946355 abstract "The surface activated bonding method originally uses cleaning of material surfaces by sputter etching using high energy ion/atom beam of inert gases, typically Ar. [1] The cleaning process removes adsorbed atoms and compound layers, typically oxides, which stabilize the surface. Therefore, after the cleaning process the surfaces become unstable active states. Mating two such activated surfaces in vacuum enables strong bond formation even at room temperature. This process is quite suitable for the wafer direct bonding. Because intimate contact is automatically achieved at the bonding interface by attractive force between two atomically smooth surfaces of polished wafers, the process requires not only heating process but also pressure application. [2,3]" @default.
- W4230946355 created "2022-05-11" @default.
- W4230946355 date "2016-01-01" @default.
- W4230946355 modified "2023-10-18" @default.
- W4230946355 title "(Invited) Surface Activated Wafer Bonding; Principle and Current Status" @default.
- W4230946355 doi "https://doi.org/10.1149/ma2016-02/32/2065" @default.
- W4230946355 hasPublicationYear "2016" @default.
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