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- W4231037345 abstract "by the CSCVT technique using iodine and hydrogen iodide as the transport agent was carried out under several conditions. Compositional, structural, and electrical properties of the films were characterized. Heterojunction solar cells were prepared from CuInS/sub 2//graphite using various window materials. CdS/CuInS/sub 2//graphite structures had an open-circuit voltage of 200-250 mV. The short-circuit current density and fill factor were low because of high series resistance. Preliminary work on the preparation of CuInS/sub 2/ films by the sulfurization of Cu-In has also been done. This process shows considerable promise." @default.
- W4231037345 created "2022-05-11" @default.
- W4231037345 date "1987-04-01" @default.
- W4231037345 modified "2023-10-16" @default.
- W4231037345 title "Feasibility of using copper indium disulfide for high-efficiency, thin-film solar cells: Final subcontract report, 1 February 1985-30 September 1986" @default.
- W4231037345 doi "https://doi.org/10.2172/6429968" @default.
- W4231037345 hasPublicationYear "1987" @default.
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