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- W4231749074 abstract "This introduction presents an overview of the key concepts discussed in the subsequent chapters of this book. The book presents the latest research and developments of directional and isotropic atomic layer etching (ALE) and puts them into the context of established dry etching technologies for semiconductor devices. It introduces etching technologies in the order of increasing complexity. The book deals with critical elementary surface processes, followed by single species etching technologies, sequential multi-species etching, and multi-species continuous processing. It also introduces directional ALE as a simplified embodiment of reactive ion etching (RIE), which is amiable to a rigorous treatment. The book presents salient RIE properties as the result of a lack of self-limitation of continuous processing where all species fluxes are on all the time. It provides the plasma and source technologies to a level of detail sufficient enough to understand how they impact the species fluxes to the etching surface." @default.
- W4231749074 created "2022-05-12" @default.
- W4231749074 date "2021-04-28" @default.
- W4231749074 modified "2023-09-26" @default.
- W4231749074 title "Introduction" @default.
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- W4231749074 doi "https://doi.org/10.1002/9783527824199.ch1" @default.
- W4231749074 hasPublicationYear "2021" @default.
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