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• W4231938743 abstract "We investigate key design issues of a low-cost 3D Cu-TSV technology: impact of TSV on MOS devices and interconnect, reliability, thermal hot spots, ESD, signal integrity and impact on circuit performance. We experimentally verify their importance and propose changes in current design practices to enable low-cost systems." @default.
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• W4231938743 date "2010-02-01" @default.
• W4231938743 modified "2023-10-06" @default.
• W4231938743 title "Design issues and considerations for low-cost 3D TSV IC technology" @default.
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• W4231938743 doi "https://doi.org/10.1109/isscc.2010.5434016" @default.
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