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- W4232410003 abstract "Silicon technology is one of the most promising for sensor development. Moreover, electronic simulation tools, originally introduced to design electronic circuits, can be adapted to design silicon-based chemical- and bio-sensors. These considerations lead to the description of the models we developed and implemented in the program SPICE for simulating ion-sensitive field-effect transistors (ISFETs) and ISFET-based microsystems. The implementation in SPICE and the simulation results are described in terms of each model. In particular, a new model of a Si3N4-gate ISFET operating under subthreshold conditions and the related electrochemical characterization are presented. The ISFET models were then used to develop a CAD system that can be considered as a general-purpose tool for designing integrated ISFET-based sensors and microsystems with on-chip processing and control capabilities." @default.
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- W4232410003 date "2005-02-14" @default.
- W4232410003 modified "2023-10-18" @default.
- W4232410003 title "Modeling ISFET microsensor and ISFET-based microsystems: a review" @default.
- W4232410003 doi "https://doi.org/10.1016/s0925-4005(04)00107-8" @default.
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