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• W4232516641 endingPage "04DP11" @default.
• W4232516641 startingPage "04DP11" @default.
• W4232516641 abstract "Absorbers of CuInS2 (CIS) solar cells are fabricated by several processes and a 11.4% efficiency CIS solar cell is reported. However, this value is lower than the theoretically expected value, possibly owing to the roughness of the CIS surface. In this study, we attempted to realize smoother CIS films using a new two-step evaporation method. As a first step, Cu-rich CIS films were deposited at a low substrate temperature of 50 °C and were annealed at 500 °C. As a second step, In and S were sequentially deposited on the annealed films to control the compositional ratio to In-rich. The deposited film showed a smoother surface than the film deposited by the single-step evaporation of Cu, In, and S. The CIS solar cell formed using the two-step evaporation method showed a higher open-circuit voltage. This should be due to the smoother film surface, which reduced the p–n junction area of the device." @default.
• W4232516641 created "2022-05-12" @default.
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• W4232516641 date "2011-04-01" @default.
• W4232516641 modified "2023-10-17" @default.
• W4232516641 title "Surface Morphology and Device Performance of CuInS₂Solar Cells Prepared by Single- and Two-Step Evaporation Methods" @default.
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• W4232516641 doi "https://doi.org/10.7567/jjap.50.04dp11" @default.
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