Matches in SemOpenAlex for { <https://semopenalex.org/work/W4232627295> ?p ?o ?g. }
Showing items 1 to 77 of
77
with 100 items per page.
- W4232627295 endingPage "222" @default.
- W4232627295 startingPage "219" @default.
- W4232627295 abstract "The thermally generated defects will lower the life time in bulk silicon and cause increasing in the leakage current of individual diodes in integrated circuits, that will finally cause the malfunction with advanced devices and IC chips. The removal characteristics of hillock defects on the single bare silicon wafer generated by the thermal process were experimentally analysed with respect to the chemical additives enhanced uniform chemical etching and mechanical abrasion of high pure nano sphere colloidal silica interplaying with the alkali based polishing slurry. During the polishing, it was found that the silicon surface contacted with high speed of rotated polishing pad under the down force pressure is chemically dissolved by the slurry containing FA/O organic polyamine(R(NH2)n) agent with adding proper proportional FA/O I non ions surfactant, which effectively lowered the surface strain of slurry contacted to the reactive surface of the wafer and slurry enhanced uniform chemical etch leading to the hillock region and no hillock region. However, by the process of chemical mechanical polishing，the results show it can eliminate the hillock defects on the surface of silicon wafer thoroughly with high removal rate, and achieve lower surface roughness than before process of polishing." @default.
- W4232627295 created "2022-05-12" @default.
- W4232627295 creator A5003277215 @default.
- W4232627295 creator A5003279097 @default.
- W4232627295 creator A5018892762 @default.
- W4232627295 creator A5044710904 @default.
- W4232627295 creator A5060291711 @default.
- W4232627295 creator A5068285146 @default.
- W4232627295 creator A5070778210 @default.
- W4232627295 date "2012-01-01" @default.
- W4232627295 modified "2023-09-25" @default.
- W4232627295 title "Removal Characteristics of Hillock Defects on Silicon Substrate by Chemical Uniformity Etching Enhanced Polishing Slurry" @default.
- W4232627295 doi "https://doi.org/10.4028/scientific5/amr.452-453.219" @default.
- W4232627295 hasPublicationYear "2012" @default.
- W4232627295 type Work @default.
- W4232627295 citedByCount "0" @default.
- W4232627295 crossrefType "journal-article" @default.
- W4232627295 hasAuthorship W4232627295A5003277215 @default.
- W4232627295 hasAuthorship W4232627295A5003279097 @default.
- W4232627295 hasAuthorship W4232627295A5018892762 @default.
- W4232627295 hasAuthorship W4232627295A5044710904 @default.
- W4232627295 hasAuthorship W4232627295A5060291711 @default.
- W4232627295 hasAuthorship W4232627295A5068285146 @default.
- W4232627295 hasAuthorship W4232627295A5070778210 @default.
- W4232627295 hasConcept C100460472 @default.
- W4232627295 hasConcept C107365816 @default.
- W4232627295 hasConcept C111368507 @default.
- W4232627295 hasConcept C127313418 @default.
- W4232627295 hasConcept C138113353 @default.
- W4232627295 hasConcept C159985019 @default.
- W4232627295 hasConcept C160671074 @default.
- W4232627295 hasConcept C171250308 @default.
- W4232627295 hasConcept C180088628 @default.
- W4232627295 hasConcept C191897082 @default.
- W4232627295 hasConcept C192562407 @default.
- W4232627295 hasConcept C2777289219 @default.
- W4232627295 hasConcept C2779227376 @default.
- W4232627295 hasConcept C33220542 @default.
- W4232627295 hasConcept C544956773 @default.
- W4232627295 hasConcept C6322943 @default.
- W4232627295 hasConcept C94293008 @default.
- W4232627295 hasConceptScore W4232627295C100460472 @default.
- W4232627295 hasConceptScore W4232627295C107365816 @default.
- W4232627295 hasConceptScore W4232627295C111368507 @default.
- W4232627295 hasConceptScore W4232627295C127313418 @default.
- W4232627295 hasConceptScore W4232627295C138113353 @default.
- W4232627295 hasConceptScore W4232627295C159985019 @default.
- W4232627295 hasConceptScore W4232627295C160671074 @default.
- W4232627295 hasConceptScore W4232627295C171250308 @default.
- W4232627295 hasConceptScore W4232627295C180088628 @default.
- W4232627295 hasConceptScore W4232627295C191897082 @default.
- W4232627295 hasConceptScore W4232627295C192562407 @default.
- W4232627295 hasConceptScore W4232627295C2777289219 @default.
- W4232627295 hasConceptScore W4232627295C2779227376 @default.
- W4232627295 hasConceptScore W4232627295C33220542 @default.
- W4232627295 hasConceptScore W4232627295C544956773 @default.
- W4232627295 hasConceptScore W4232627295C6322943 @default.
- W4232627295 hasConceptScore W4232627295C94293008 @default.
- W4232627295 hasLocation W42326272951 @default.
- W4232627295 hasOpenAccess W4232627295 @default.
- W4232627295 hasPrimaryLocation W42326272951 @default.
- W4232627295 hasRelatedWork W2085781254 @default.
- W4232627295 hasRelatedWork W2088085560 @default.
- W4232627295 hasRelatedWork W2157625125 @default.
- W4232627295 hasRelatedWork W2240919621 @default.
- W4232627295 hasRelatedWork W2356978086 @default.
- W4232627295 hasRelatedWork W2383661238 @default.
- W4232627295 hasRelatedWork W4232627295 @default.
- W4232627295 hasRelatedWork W749211866 @default.
- W4232627295 hasRelatedWork W2117073465 @default.
- W4232627295 hasRelatedWork W2125194887 @default.
- W4232627295 hasVolume "452-453" @default.
- W4232627295 isParatext "false" @default.
- W4232627295 isRetracted "false" @default.
- W4232627295 workType "article" @default.