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- W4232776903 abstract "A theoretical investigation on the structural stabilities and electronic properties of HgTe under high pressure was conducted using first principles based on density functional theory. Our results demonstrate that the sequence of the pressure-induced phase transitions of HgTe is from the zinc blende, to cinnabar, rocksalt, orthorhombic, and CsCl-type structures. The pressure effects on the optical properties were discussed and compared with previous calculations and experimental data whenever available." @default.
- W4232776903 created "2022-05-12" @default.
- W4232776903 date "1967-05-01" @default.
- W4232776903 modified "2023-10-18" @default.
- W4232776903 title "953. Oriented growth of semiconductors. 111. Growth of gallium arsenide on germanium" @default.
- W4232776903 doi "https://doi.org/10.1016/0042-207x(67)90955-4" @default.
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