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- W4234860079 abstract "Advanced CMOS devices are increasingly affected by various kinds of process variations. Whereas the impact of statistical process variations such as Random Dopant Fluctuations (RDF), see Fig. 1 (right), has for several years been discussed in numerous publications, the effect of systematic process variations which result from non-idealities of the equipment used has got much less attention, although the diversity of processes and equipment leads to many different sources of variations. Fig. 1 (left) shows an example for the effect of defocus and dose in optical lithography on the pattern size generated in the photoresist. In order to assess and minimize the impact of variations on device and chip performance, relevant systematic and statistical variations must be simulated in parallel, from equipment through process to device and circuit level. Correlations must be traced from their source to the final result. This enables variation-aware Design Technology Co-Optimization (DTCO). This topic is being addressed by the cooperative European project SUPERAID7 [1]." @default.
- W4234860079 created "2022-05-12" @default.
- W4234860079 date "2018-01-01" @default.
- W4234860079 modified "2023-10-18" @default.
- W4234860079 title "(Invited) Process Variability for Devices at and Beyond the 7 Nm Node" @default.
- W4234860079 doi "https://doi.org/10.1149/ma2018-01/24/1461" @default.
- W4234860079 hasPublicationYear "2018" @default.
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