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- W4234885557 abstract "Ion-beam etched pattern profiles for an oblique ion-beam incidence have been investigated. The ion-beam etching was performed using a Kaufman type ion gun and a rotating stage. Etched patterns show a unique side wall profile due to ion-beam, shadowing effect. The side wall angle discontinuously changes at the half point of the total etching depth. As the ion-beam incident angle increases, the bottom wall angle becomes lower, while the upper wall angle approaches normal to the sample plane. The bottom wall profile can be interpreted by a theoretical model, taking into consideration the time dependent ion-beam flux distribution. The lateral shift of the upper wall can be explained by considering both etching and redeposition." @default.
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- W4234885557 date "1978-01-01" @default.
- W4234885557 modified "2023-10-04" @default.
- W4234885557 doi "https://doi.org/10.3131/jvsj.21.392" @default.
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