Matches in SemOpenAlex for { <https://semopenalex.org/work/W4236025644> ?p ?o ?g. }
Showing items 1 to 62 of
62
with 100 items per page.
- W4236025644 endingPage "112" @default.
- W4236025644 startingPage "112" @default.
- W4236025644 abstract "We analyse the charge transport mechanism in semi-insulating (SI) materials for N-SI-N and P-SI-P structures. The SI layers are large band gap semiconductors obtained by deep levels compensation of residual shallow donors or acceptors. A preceding theory is extended to the case of two, donor or acceptor, deep compensating levels [1]. The conduction mechanism is complex: ambipolar transport, heavy recombination, space charge effect and we show that the current is controlled by both bulk and interface effects at the reverse biased N-SI or P-SI junction. We develop a simple model, without the usual assumption of space charge neutrality, valid up to the beginning of one carrier space charge current. We show that a linear relation exists between the bulk excess free carrier densities and that depending on the value of a quantity M, given as a function of the deep levels electrical parameters, energy position, concentration and capture cross sections, as well as the dopants concentrations, the conduction mechanism is either contact controlled showing a pronounced current saturation effect or bulk controlled with one and for long sample, two, quasi linear J–Va relationship. Numerical modelisations of the drift–diffusion transport model confirm these analytical results for the case of one or two compensating deep levels. GaAs (SI) or InP (SI) layers are used for their high resistivity and insulating properties in FET technology, in buried heterostructures, diode laser and in radiation detectors technologies. These results are of importance for the interpretation of conductivity and Hall Effect measurements and explain the parasitic side-gating effect in GaAs or InP MESFET’s." @default.
- W4236025644 created "2022-05-12" @default.
- W4236025644 date "1977-01-01" @default.
- W4236025644 modified "2023-10-14" @default.
- W4236025644 title "Reliability study of GaAs MESFETs" @default.
- W4236025644 doi "https://doi.org/10.1016/0026-2714(77)90314-6" @default.
- W4236025644 hasPublicationYear "1977" @default.
- W4236025644 type Work @default.
- W4236025644 citedByCount "0" @default.
- W4236025644 crossrefType "journal-article" @default.
- W4236025644 hasConcept C103132145 @default.
- W4236025644 hasConcept C121332964 @default.
- W4236025644 hasConcept C147120987 @default.
- W4236025644 hasConcept C155891486 @default.
- W4236025644 hasConcept C159985019 @default.
- W4236025644 hasConcept C165801399 @default.
- W4236025644 hasConcept C172100665 @default.
- W4236025644 hasConcept C192562407 @default.
- W4236025644 hasConcept C25621703 @default.
- W4236025644 hasConcept C26873012 @default.
- W4236025644 hasConcept C2779892579 @default.
- W4236025644 hasConcept C49040817 @default.
- W4236025644 hasConcept C57863236 @default.
- W4236025644 hasConcept C62520636 @default.
- W4236025644 hasConcept C78434282 @default.
- W4236025644 hasConcept C79794668 @default.
- W4236025644 hasConceptScore W4236025644C103132145 @default.
- W4236025644 hasConceptScore W4236025644C121332964 @default.
- W4236025644 hasConceptScore W4236025644C147120987 @default.
- W4236025644 hasConceptScore W4236025644C155891486 @default.
- W4236025644 hasConceptScore W4236025644C159985019 @default.
- W4236025644 hasConceptScore W4236025644C165801399 @default.
- W4236025644 hasConceptScore W4236025644C172100665 @default.
- W4236025644 hasConceptScore W4236025644C192562407 @default.
- W4236025644 hasConceptScore W4236025644C25621703 @default.
- W4236025644 hasConceptScore W4236025644C26873012 @default.
- W4236025644 hasConceptScore W4236025644C2779892579 @default.
- W4236025644 hasConceptScore W4236025644C49040817 @default.
- W4236025644 hasConceptScore W4236025644C57863236 @default.
- W4236025644 hasConceptScore W4236025644C62520636 @default.
- W4236025644 hasConceptScore W4236025644C78434282 @default.
- W4236025644 hasConceptScore W4236025644C79794668 @default.
- W4236025644 hasIssue "2" @default.
- W4236025644 hasLocation W42360256441 @default.
- W4236025644 hasOpenAccess W4236025644 @default.
- W4236025644 hasPrimaryLocation W42360256441 @default.
- W4236025644 hasRelatedWork W1599277090 @default.
- W4236025644 hasRelatedWork W2030846261 @default.
- W4236025644 hasRelatedWork W2042524877 @default.
- W4236025644 hasRelatedWork W2048940161 @default.
- W4236025644 hasRelatedWork W2058676402 @default.
- W4236025644 hasRelatedWork W2084533563 @default.
- W4236025644 hasRelatedWork W2100051997 @default.
- W4236025644 hasRelatedWork W2340508754 @default.
- W4236025644 hasRelatedWork W4283584437 @default.
- W4236025644 hasRelatedWork W4296098637 @default.
- W4236025644 hasVolume "16" @default.
- W4236025644 isParatext "false" @default.
- W4236025644 isRetracted "false" @default.
- W4236025644 workType "article" @default.