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- W4236036074 abstract "III-V semiconductor materials have been drawing extensive interests in the past decades due to their superior electronic and optical properties with great potential to improve the device performance. Compared to Si, III-V materials have mobility about 10 times higher and injection speed 2~3 times faster. CMOS devices can benefit from higher mobility and injection speed to improve operation frequency, current, power consumption, and reduce short channel effect, etc. With direct bandgap and sophisticated bandgap engineering, III-V materials also provide board range of optical applications such as optical transceivers, infrared and visible LEDs/photo detectors, photovoltaics, and lasers. It's ideal and cost effective to integrate III-V with large Si substrate (e.g. 300mm) to take advantage of the main stream Si process flow in the semiconductor industry. The biggest challenges are lattice mismatch and anti-phase boundary (APB) caused by polar/nonpolar planes. In this paper, we reviewed the issues for growth on blanket wafers and selective growth on patterned wafers using the Applied Materials' 300mm III-V metal-organic chemical vapor deposition tool (MOCVD)." @default.
- W4236036074 created "2022-05-12" @default.
- W4236036074 date "2016-01-01" @default.
- W4236036074 modified "2023-10-14" @default.
- W4236036074 title "Building III-V Devices onto Large Si Wafers" @default.
- W4236036074 doi "https://doi.org/10.1149/ma2016-02/26/1795" @default.
- W4236036074 hasPublicationYear "2016" @default.
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