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- W4236692193 abstract "The techniques of reflectance anisotropy spectroscopy (RAS) and reflection high-energy electron diffraction (RHEED) have been employed, for the first time in concert, to characterize the growth of sub-monolayer coverages of both Si and Be deposited onto theGaAs(001)-c(4 × 4) surface. The RHEED observations enabled the RAS spectra collected for a series of Si and Be coverages, in the range 0.005 to 1.000 monolayer (ML), to be interpreted in terms of changes in the sample surface structure. For the case of Si/GaAs(001) the following series of surface reconstructions were observed with increasing Si coverage:c(4 × 4),c(4 × 4)(1 × 2), (1 × 2),(1 × 2)(3 × 1) and, (3 × 1). During the deposition ofBeGaAs(001), c(4 × 4),c(4 × 4)(1 × 2),c(4 × 4)(1 × 3),(1 × 2)(1 × 3), (1 × 3), and (1 × 2) reconstructions were noted to evolve. The fact that unique, but highly reproducible, RAS signatures were obtained for each of these surface phases demonstrates the applicability of a combined RHEED/RAS system for monitoring sub-monolayer heteroepitaxial growth with a surface sensitivity of the order of1200th of a monolayer." @default.
- W4236692193 created "2022-05-12" @default.
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- W4236692193 date "1995-05-01" @default.
- W4236692193 modified "2023-09-26" @default.
- W4236692193 title "The characterization of the growth of sub-monolayer coverages (1/200th to 1 monolayer) of Si and Be on GaAs(001): A reflectance anisotropy spectroscopy and reflection high-energy electron diffraction study" @default.
- W4236692193 doi "https://doi.org/10.1016/0022-0248(94)00721-7" @default.
- W4236692193 hasPublicationYear "1995" @default.
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