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• W4237587215 abstract "Reduction of the bowing of GaN-on-sapphire and GaN-on-silicon substrates was demonstrated with an internally focused laser processing. Stress implantation was successfully achieved inside the sapphire and silicon substrates by the internally focused laser process to compensate for the strain generated by the GaN/sapphire and GaN/Si systems which resulted in substrate bow reduction. This new approach gives us a larger flexibility in the design engineering of epitaxial and device fabrication processes and thus accelerates the realization of a larger diameter device process with GaN-on-sapphire and GaN-on silicon." @default.
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• W4237587215 date "2012-01-01" @default.
• W4237587215 modified "2023-10-17" @default.
• W4237587215 title "Reduction of Bowing in GaN-on-Sapphire and GaN-on-Silicon Substrates by Stress Implantation by Internally Focused Laser Processing" @default.
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• W4237587215 doi "https://doi.org/10.7567/jjap.51.016504" @default.
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