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- W4237788003 abstract "Publisher SummaryThis chapter discusses some of the major approaches to the modeling of sputter deposition. Process modeling can be a versatile way to perform a virtual experiment, modeling a sputtering, transport, or deposition process without ever turning on a sputtering system. Commercial versions of several of these models also exist, either for sale to the end user or as a service, so that the user can gain access to the prediction capabilities without generating a new model. Close examination of the subtle features in the molecular dynamics approach can provide information about the physical characteristics of the deposit, such as stress or defect density. The widely used program is TRIM (transport of ions in matter), and this program was developed to examine the world of energetic ion implantation. The TRIM models are useful in exploring other relevant ion-impact processes. The physical processes that occur at the film and wafer surfaces are well known and characterized." @default.
- W4237788003 created "2022-05-12" @default.
- W4237788003 date "1999-01-01" @default.
- W4237788003 modified "2023-09-27" @default.
- W4237788003 title "Chapter 10 Process modeling for magnetron deposition" @default.
- W4237788003 doi "https://doi.org/10.1016/s1079-4050(99)80013-1" @default.
- W4237788003 hasPublicationYear "1999" @default.
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