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- W4238237192 abstract "The determination of those factors which influence the formation of Schottky barriers at metal-semiconductor interfaces has been an important goal for many decades. During the past few years considerable progress has been made as a result of the application of modern surface science techniques and parallel theoretical methods. However, it is true to say that the problem is still, at best, only partially understood. The formation of contacts, both ohmic and rectifying, has been an important technological topic even well before the transistor was invented and has in fact assumed increasing importance recently with the rapid development of very large scale integrated circuits." @default.
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- W4238237192 title "Metal-Semiconductor Interfaces" @default.
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- W4238237192 doi "https://doi.org/10.1007/978-1-4899-2382-0_23" @default.
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