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- W4238749513 abstract "Both photovoltaic and light emitting devices require the unimpeded flow of electrons, holes, and photons. Often this represents a problem in high performance devices. The problem is sometimes resolved through the use of a tunnel junction formed by epitaxially growing a stack consisting of degenerately doped p- and n-type layers. Because the Fermi level resides in the valence and conduction band, respectively, the conduction band minimum is at a lower energy than the valence band maximum (Fig 1a). Such heavily doped layers are not easily formed in amorphous or polycrystalline semiconductors however, especially for p-type films. Alternatively, one can use a broken gap junction (BGJ) which relies on the difference in affinity to achieve the same result as the tunnel junction (Fig. 1b). The n-type side must have an electron affinity equal to or greater than the sum of the affinity and band gap of the p-type side. Numerical simulations of a metal-oxide broken-gap heterojunction between p-Cu2O and n-In2O3suggest that low-resistance ohmic behavior can be achieved for even for only moderate doping concentrations." @default.
- W4238749513 created "2022-05-12" @default.
- W4238749513 date "2014-01-01" @default.
- W4238749513 modified "2023-09-26" @default.
- W4238749513 title "(Invited) Sputtered Metal Oxide Broken Gap Junctions" @default.
- W4238749513 doi "https://doi.org/10.1149/ma2014-01/36/1385" @default.
- W4238749513 hasPublicationYear "2014" @default.
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