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Matches in SemOpenAlex for { <https://semopenalex.org/work/W4238875648> ?p ?o ?g. }

• W4238875648 endingPage "314" @default.
• W4238875648 startingPage "313" @default.
• W4238875648 abstract "Ti 3 SiC 2 is a member of the family of layered ternary compounds well known as the M n +1 AX n phases ( n = 1 – 3, or ‘MAX phases’) where M is a transition‐metal, A is an A‐group element and X is either carbon or nitrogen. These compounds have attracted increasing attention since they possess a unique combination of metallic and ceramic properties. They are elastically stiff, electrically and thermally conductive, relatively soft, damage tolerant and resistant to thermal shock. Therefore, Ti 3 SiC 2 have been proposed to be used in the generation IV nuclear reactors and several works were devoted to studying radiation damage by high energy heavy ions. Ti 3 SiC 2 is mainly synthesised by powder metallurgy. Nevertheless, it was recently shown that monocrystalline Ti 3 SiC 2 thin films onto 4H‐SiC can be formed by magnetron sputtering using Al and Ti co‐deposition on SiC at room temperature following by an annealing [1]. Ti 3 SiC 2 formation is based on interdiffusion processes between the substrate and the deposited layer. A layered hexagonal structure is obtained which consists of alternate near‐close‐packed layers of Ti 6 C octahedral interleafed with layers of Si atoms. Thin‐film of Ti 3 SiC 2 could become suitable for many applications such as electrical contacts, wear protective coatings and to produce the new 2D materials labelled MXène. It is then crucial to progress in the knowledge of the physical properties of Ti 3 SiC 2 thin‐film especially their behaviour under ion implantation. Light ion implantation (He, H) is commonly used to produce two dimensional defects in Si which are considered to be the precursors of cracks that are particularly interesting for the thin layer transfer technique well‐known as the smart‐cut process. The purpose of this work is to study the defects induced by light ion implantation (He, H) in Ti 3 SiC 2 thin‐film in order to create He/H‐platelets. The microstructural analysis of the implant Ti 3 SiC 2 thin films and their evolution under subsequent annealing will be performed by XRD and XTEM. First XTEM results (Fig. 1) show a high density of He‐platelets after low energy He implantation at medium fluence and subsequent annealing. Works are in progress for studying in more detailed the MAX phase and the He‐platelets. Results will be compared to a theoretical work who predicts that He atoms prefers staying near Si atoms [2]. The authors wish to acknowledge P. Guerin for his help during the film deposition and M. Marteau for He implantation experiments." @default.
• W4238875648 created "2022-05-12" @default.
• W4238875648 creator A5009010425 @default.
• W4238875648 creator A5048209547 @default.
• W4238875648 creator A5048299700 @default.
• W4238875648 creator A5088379277 @default.
• W4238875648 date "2016-12-20" @default.
• W4238875648 modified "2023-09-30" @default.
• W4238875648 title "He-filled bi-dimensional defects in Ti3SiC2 MAX Phases" @default.
• W4238875648 cites W2006430688 @default.
• W4238875648 cites W2010343758 @default.
• W4238875648 doi "https://doi.org/10.1002/9783527808465.emc2016.6152" @default.
• W4238875648 hasPublicationYear "2016" @default.
• W4238875648 type Work @default.
• W4238875648 citedByCount "0" @default.
• W4238875648 crossrefType "other" @default.
• W4238875648 hasAuthorship W4238875648A5009010425 @default.
• W4238875648 hasAuthorship W4238875648A5048209547 @default.
• W4238875648 hasAuthorship W4238875648A5048299700 @default.
• W4238875648 hasAuthorship W4238875648A5088379277 @default.
• W4238875648 hasBestOaLocation W42388756481 @default.
• W4238875648 hasConcept C134132462 @default.
• W4238875648 hasConcept C159985019 @default.
• W4238875648 hasConcept C171250308 @default.
• W4238875648 hasConcept C19067145 @default.
• W4238875648 hasConcept C191897082 @default.
• W4238875648 hasConcept C192562407 @default.
• W4238875648 hasConcept C199360897 @default.
• W4238875648 hasConcept C22423302 @default.
• W4238875648 hasConcept C2776106465 @default.
• W4238875648 hasConcept C41008148 @default.
• W4238875648 hasConcept C61427134 @default.
• W4238875648 hasConcept C64452783 @default.
• W4238875648 hasConceptScore W4238875648C134132462 @default.
• W4238875648 hasConceptScore W4238875648C159985019 @default.
• W4238875648 hasConceptScore W4238875648C171250308 @default.
• W4238875648 hasConceptScore W4238875648C19067145 @default.
• W4238875648 hasConceptScore W4238875648C191897082 @default.
• W4238875648 hasConceptScore W4238875648C192562407 @default.
• W4238875648 hasConceptScore W4238875648C199360897 @default.
• W4238875648 hasConceptScore W4238875648C22423302 @default.
• W4238875648 hasConceptScore W4238875648C2776106465 @default.
• W4238875648 hasConceptScore W4238875648C41008148 @default.
• W4238875648 hasConceptScore W4238875648C61427134 @default.
• W4238875648 hasConceptScore W4238875648C64452783 @default.
• W4238875648 hasLocation W42388756481 @default.
• W4238875648 hasOpenAccess W4238875648 @default.
• W4238875648 hasPrimaryLocation W42388756481 @default.
• W4238875648 hasRelatedWork W1671997990 @default.
• W4238875648 hasRelatedWork W1963504437 @default.
• W4238875648 hasRelatedWork W1968373997 @default.
• W4238875648 hasRelatedWork W1988448510 @default.
• W4238875648 hasRelatedWork W2086744665 @default.
• W4238875648 hasRelatedWork W2213366562 @default.
• W4238875648 hasRelatedWork W2281145519 @default.
• W4238875648 hasRelatedWork W2364319454 @default.
• W4238875648 hasRelatedWork W2391062645 @default.
• W4238875648 hasRelatedWork W137487168 @default.
• W4238875648 isParatext "false" @default.
• W4238875648 isRetracted "false" @default.
• W4238875648 workType "other" @default.