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- W4239517509 abstract "Strain effects on avalanche multiplication in a one-dimensional Si nanodot array have been theoretically studied. Compressive strain has two competing effects of the band-gap narrowing and the level-separation widening. The former reduces the ionization threshold and the latter reduces the impact ionization rate for higher energy region. Larger carrier multiplication factor is observed under compressive strain condition." @default.
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- W4239517509 date "2012-04-01" @default.
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- W4239517509 title "Strain Effects on Avalanche Multiplication in a Silicon Nanodot Array" @default.
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- W4239517509 doi "https://doi.org/10.7567/jjap.51.04dj01" @default.
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