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- W4240202310 abstract "Magnetic films have been used to fabricate magnetic random access memory (MRAM) devices. A key issue for producing magnetic devices is the problems associated with magnetic film etching, in particular a low etching rate and sidewall deposition caused by non-volatile etching products. We recently found that plasma radiations degraded magnetic properties. To overcome these problems, we investigated the effects of a few tens of micro-second pulse-time-modulated (TM) plasma on magnetic film etching. In this study, we found that injecting negative ions from TM plasma produced no sidewall deposition and accomplished damage-free magnetic film etching." @default.
- W4240202310 created "2022-05-12" @default.
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- W4240202310 date "2005-01-01" @default.
- W4240202310 modified "2023-09-27" @default.
- W4240202310 title "High-performance and damage-free magnetic film etching using pulse-time-modulated Cl/sub 2/ plasma" @default.
- W4240202310 doi "https://doi.org/10.1109/imnc.2005.203791" @default.
- W4240202310 hasPublicationYear "2005" @default.
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