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• W4240277598 abstract "This chapter describes the phase equilibrium diagrams of multi-component oxides and crystal structures of InGaO3(ZnO)m (m > 0) with layered structures. Indium–gallium–zinc oxide (IGZO) has gained traction as a novel semiconductor material in electronics. The features and physical properties of IGZO differ from those of silicon, which is widely used in electronic devices. The chapter explains the crystal structures and phase equilibrium diagrams at high temperatures in the R2O3–A2O3–BO system, including the layered oxides. It focuses on the Y2O3–Fe2O3–Fe and Yb2O3– Fe2O3–Fe systems, from which the homologous (RFeO3)n(BO) were synthesized. The phase equilibrium diagrams of these systems were determined in situ by thermogravimetric analysis under controlled oxygen partial pressure P(O2). The chapter talks about the crystal structures of In2O3–Ga2O3–ZnO systems with the compositional formula InGaO3(ZnO)m (m: natural number), and their solid solutions. It presents the analytical results of various polycrystalline powders." @default.
• W4240277598 created "2022-05-12" @default.
• W4240277598 date "2016-09-15" @default.
• W4240277598 modified "2023-10-14" @default.
• W4240277598 title "Layered Compounds in the In₂O₃–Ga₂O₃–ZnO System and Related Compounds in the Ternary System" @default.
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• W4240277598 doi "https://doi.org/10.1002/9781119247289.ch1" @default.
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