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- W4241193497 abstract "This chapter reviews the thermal models for gallium nitride (GaN) devices in conventional bottom-cooled packages as well as top-cooled and chip-scale packages. It discusses how to select and attach a heatsink for these different thermal design schemes. The two primary components of a thermal design are the heatsink and the thermal interface material (TIM). The chapter also discusses thermal management for an entire GaN-based power conversion system, including equivalent circuit models, temperature measurements, experimental characterization techniques, and application examples. The thermal modeling of GaN transistors is similar to that of metal oxide silicon field effect transistors. The chapter examines the selection of key thermal design components, as well as heatsink attachment schemes for both bottom-side and top-side or six-sided cooling. Values for the thermal resistance of the heatsink and TIM can be extracted from their datasheets, whereas the thermal resistance for convection and radiation are configuration- and size-dependent, as well as temperature- and orientation-dependent." @default.
- W4241193497 created "2022-05-12" @default.
- W4241193497 date "2019-08-30" @default.
- W4241193497 modified "2023-09-27" @default.
- W4241193497 title "Thermal Management" @default.
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- W4241193497 doi "https://doi.org/10.1002/9781119594406.ch6" @default.
- W4241193497 hasPublicationYear "2019" @default.
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