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- W4241264539 abstract "AbstractUnlike the conventional GaAs- and InP-based enhancement/depletion-mode ( E / D -mode) transistors, the improved gate characteristics of the AlGaAs/InGaAs E -mode high electron mobility transistors (HEMTs) by way of hybrid gate recesses to remove the n -AlAs/ i -GaAs/ n -AlGaAs virtual channel layers upon 2DEG channels are demonstrated. As compared to the D -mode device (sample A), the gate reverse currents are effectively reduced by 45 and 102 times for the E -mode devices with additional gate recess time of 24 s (sample B) and 30 s (sample C) to remove part of the virtual channel layers, respectively. Under gate forward bias, the hybrid gate recesses also enable the gate turn-on voltages to increase. Furthermore, the threshold voltages of –1.25, 0.09, and 0.22 V are observed in the samples A, B, and C, respectively. The maximum transconductances of 187.3, 209.2, and 243.4 mS/mm and saturation current density of 482.8, 410.6, and 347.4 mA/mm are obtained in the samples A, B, and C, respectively." @default.
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- W4241264539 date "2019-01-01" @default.
- W4241264539 modified "2023-10-18" @default.
- W4241264539 title "Comparative Studies of AlGaAs/InGaAs Enhancement/Depletion-Mode High Electron Mobility Transistors with Virtual Channel Layers by Hybrid Gate Recesses Approaches -=SUP=-*-=/SUP=-" @default.
- W4241264539 doi "https://doi.org/10.21883/ftp.2019.03.47299.8848" @default.
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