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• W4241474762 abstract "To achieve low write current in high density Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) arrays, it is important to understand and co-optimize the different kinds of device switching currents, governed by different materials parameters. We demonstrate that double magnetic tunnel junctions (DMTJs) lower the switching current threshold I <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>c0</inf> by a factor of two when compared to conventional single MTJs. In single MTJs, the overdrive required to reach a write-error rate (WER) of 1E-6 was reduced by materials optimization from 53% to 29% a write-error rate (WER) of 1E-6 by materials optimization. Ultra-low switching current of 8 µA at WER = 1E-9 was achieved in an 11 nm MTJ with 10 ns write pulses." @default.
• W4241474762 created "2022-05-12" @default.
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• W4241474762 date "2017-04-01" @default.
• W4241474762 modified "2023-09-24" @default.
• W4241474762 title "Low-current Spin Transfer Torque MRAM" @default.
• W4241474762 cites W2019378533 @default.
• W4241474762 cites W2084192944 @default.
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• W4241474762 doi "https://doi.org/10.1109/vlsi-dat.2017.7939701" @default.
• W4241474762 hasPublicationYear "2017" @default.
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