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• W4241515511 endingPage "1315" @default.
• W4241515511 startingPage "1315" @default.
• W4241515511 abstract "Researchers from Sichuan University, China, propose a new superjunction (SJ) structure designed to reduce the power loss of insulated-gate bipolar transistors (IGBTs). The new ‘carrier-storage-enhanced SJ IGBT’ has a 23% lower on-state voltage drop compared to a n-Si/p-Si SJ IGBT. IGBTs are important parts of power semiconductor devices, which themselves are core components of power electronic circuits. IGBTs provide fast and efficient switching and consist of four alternating layers, controlled by a metal-oxide-semiconductor (MOS) gate structure. The efficiency of power electronic systems is linked to 3 factors: fast switching, high breakdown voltage (VB) and the difference between the turn-off loss (Eoff) and the on-state voltage drop (VCE(sat)) of the power semiconductor device. Huang (centre) and colleagues in their lab space at Sichuan University. Schematic diagram of energy band and carriers transport in the proposed SJ IGBT. Tradeoffs for VB-VCE(sat) (a) and Eoff-VCE(sat) (b). IGBTs with SJ structures incorporate pillars of n- and p-type semiconductor material (known as ‘doped’ material). This allows the IGBT to be turned off quickly, which can increase the difference between Eoff and VCE(sat), thus improving the device efficiency. However, as the adage goes, “with great doping comes great charge imbalance”. VB is sensitive to charge imbalance and thus the improvement in efficiency gained from the incorporated pillars is curtailed somewhat by the breakdown voltage's sensitivity. Recent work by Huang and colleagues led to the development of a so-called ‘carrier-storage-enhanced (CSE) SJ’ in which the p-pillar is connected indirectly to the emitter contact in the SJ structure. This effectively lowers the VCE(sat) and also reduces the amount of doping required in the n- and p-pillars, leading to an excellent Eoff-VCE(sat) tradeoff. The VB is still sensitive to the charge imbalance, and that is where the research group turned their attention next. By changing the chemical makeup of the SJ structure, using n-Si and p-3C-SiC pillars instead of n-Si and p-Si pillars, Huang's group found that the charge-imbalance sensitivity of VB was reduced. In addition, the new SJ structure was found to reduce the amount of reverse-recovery behaviour, which is undesirable in these devices. Coupling of the CSE-SJ and an IGBT gives rise to the (somewhat verbose) CSE-SJ-IGBT, the simulation results of which are presented in this issue of Electronics Letters. The simulation results for this device are promising. VCE(sat) is around 20% lower whilst maintaining the same V­B and Eoff. This improvement has been attributed to the CSE-SJ. The n-Si/p-3C-SiC heterojunction forms a high hole barrier, which prevents hole collection by the p-3C-SiC pillar. Huang is keen to produce the device to see how experimental results stack up against the simulated ones presented. A successfully fabricated CSE-SJ-IGBT that produces the same results as the simulation has the potential to be highly useful in medium- and high-power applications. IGBT devices have dominated medium-power applications for some time. Recently, however, the rise of SiC metal-oxide semiconductor field-effect transistors (MOSFETs) have begun eating into the market of IGBT devices. Companies are exploring the potential of IGBT devices and the work presented here could one day be an important piece in the jigsaw of the future. Huang believes that SiC IGBT devices could be very promising in high-power applications, once the manufacturing process matures. It will be interesting to see what experimental studies of the device presented in Huang's submission discover and how it could potentially affect the future of power semiconductor devices." @default.
• W4241515511 created "2022-05-12" @default.
• W4241515511 date "2019-12-01" @default.
• W4241515511 modified "2023-10-14" @default.
• W4241515511 title "unfamiliar pillars" @default.
• W4241515511 doi "https://doi.org/10.1049/el.2019.3739" @default.
• W4241515511 hasPublicationYear "2019" @default.
• W4241515511 type Work @default.
• W4241515511 citedByCount "0" @default.
• W4241515511 crossrefType "journal-article" @default.
• W4241515511 hasBestOaLocation W42415155111 @default.
• W4241515511 hasConcept C108225325 @default.
• W4241515511 hasConcept C119599485 @default.
• W4241515511 hasConcept C121332964 @default.
• W4241515511 hasConcept C127413603 @default.
• W4241515511 hasConcept C129014197 @default.
• W4241515511 hasConcept C163258240 @default.
• W4241515511 hasConcept C165801399 @default.
• W4241515511 hasConcept C171250308 @default.
• W4241515511 hasConcept C172385210 @default.
• W4241515511 hasConcept C192328126 @default.
• W4241515511 hasConcept C192562407 @default.
• W4241515511 hasConcept C23061349 @default.
• W4241515511 hasConcept C2779227376 @default.
• W4241515511 hasConcept C28285623 @default.
• W4241515511 hasConcept C49040817 @default.
• W4241515511 hasConcept C61696701 @default.
• W4241515511 hasConcept C62520636 @default.
• W4241515511 hasConcept C79635011 @default.
• W4241515511 hasConcept C82178898 @default.
• W4241515511 hasConceptScore W4241515511C108225325 @default.
• W4241515511 hasConceptScore W4241515511C119599485 @default.
• W4241515511 hasConceptScore W4241515511C121332964 @default.
• W4241515511 hasConceptScore W4241515511C127413603 @default.
• W4241515511 hasConceptScore W4241515511C129014197 @default.
• W4241515511 hasConceptScore W4241515511C163258240 @default.
• W4241515511 hasConceptScore W4241515511C165801399 @default.
• W4241515511 hasConceptScore W4241515511C171250308 @default.
• W4241515511 hasConceptScore W4241515511C172385210 @default.
• W4241515511 hasConceptScore W4241515511C192328126 @default.
• W4241515511 hasConceptScore W4241515511C192562407 @default.
• W4241515511 hasConceptScore W4241515511C23061349 @default.
• W4241515511 hasConceptScore W4241515511C2779227376 @default.
• W4241515511 hasConceptScore W4241515511C28285623 @default.
• W4241515511 hasConceptScore W4241515511C49040817 @default.
• W4241515511 hasConceptScore W4241515511C61696701 @default.
• W4241515511 hasConceptScore W4241515511C62520636 @default.
• W4241515511 hasConceptScore W4241515511C79635011 @default.
• W4241515511 hasConceptScore W4241515511C82178898 @default.
• W4241515511 hasIssue "25" @default.
• W4241515511 hasLocation W42415155111 @default.
• W4241515511 hasOpenAccess W4241515511 @default.
• W4241515511 hasPrimaryLocation W42415155111 @default.
• W4241515511 hasRelatedWork W1607266201 @default.
• W4241515511 hasRelatedWork W2129890820 @default.
• W4241515511 hasRelatedWork W2146714001 @default.
• W4241515511 hasRelatedWork W2203765578 @default.
• W4241515511 hasRelatedWork W2495603614 @default.
• W4241515511 hasRelatedWork W2527912109 @default.
• W4241515511 hasRelatedWork W2777599844 @default.
• W4241515511 hasRelatedWork W2905416976 @default.
• W4241515511 hasRelatedWork W3021827399 @default.
• W4241515511 hasRelatedWork W3023896308 @default.
• W4241515511 hasVolume "55" @default.
• W4241515511 isParatext "false" @default.
• W4241515511 isRetracted "false" @default.
• W4241515511 workType "article" @default.