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- W4241675710 abstract "Formation of tantalum silicides has been investigated by cosputtering tantalum and silicon on polycrystalline silicon and oxidized silicon wafers. Alloys with as-deposited Si/Ta atomic ratios of 0.6 to 3 are sintered in hydrogen or argon ambient in the temperature range 400–1000 °C. It is found that for alloys with Si/Ta?1.0 and sintered at temperatures <700 °C, only Ta5Si3 is formed. At higher temperatures and in presence of polycrystalline silicon TaSi2 is formed. In the absence of polycrystalline silicon (i.e., on oxide) only Ta5Si3 is formed at all temperatures. For alloys with Si/Ta ratios ?2 only TaSi2 is formed. In all cases the resistivity decreases as a result of sintering, ending up in a value as a low as ∼50 μΩ cm after 1000 °C/30 min sintering. The stress in the silicided films is found to be nearly 1×1010 dyn/cm2, tensile. The results have been explained on the basis of the fact that in cosputtered films interaction occurs locally which leads to smaller grain size, higher resistivities, lower stress, and smoother surface." @default.
- W4241675710 created "2022-05-12" @default.
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- W4241675710 date "1980-03-01" @default.
- W4241675710 modified "2023-10-04" @default.
- W4241675710 title "Silicide formation in thin cosputtered (tantalum + silicon) films on polycrystalline silicon and SiO2" @default.
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- W4241675710 doi "https://doi.org/10.1063/1.327814" @default.
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