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- W42420009 abstract "The interesting properties of artificially-layered magnetic structures include perpendicular magnetic anisotropy in films of Fe or Co that are a few monolayers thick, sandwiched by non-magnetic metals or simply left uncoated in ultra-high vacuum. MBE growth of magnetic metal structures on semiconductors usually requires an intermediate film between the metal and the semiconductor. The RHEED (reflection high energy electron diffraction) pattern from each subsequent Co layer shows that it grows in the fcc structure parallel with Pt. Each subsequent Pt film grows in a parallel setting to both the Co and Ag films. This relationship is maintained throughout the structure to the final Pt capping film of the 15 period (3 A Co-16 A Pt) superlattice. The expected c-axis lattice constant expansion is 0.58%, assuming a coherent, lattice-matched interface and bulk value of Poisson's ratio which is probably reasonable for a film of this thickness. The transition temperature from the helically-ordered state to the ferromagnetic state increases with field, as for bulk single crystals of Dy. Recently, giant magnetoresistance (GMR) has been found for non-multilayer systems comprising single films of a heterogeneous, phase-separated mixture of a ferromagnetic and non-magnetic metal." @default.
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- W42420009 date "1995-01-01" @default.
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- W42420009 title "MBE Growth of Artificially-Layered Magnetic Metal Structures" @default.
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- W42420009 doi "https://doi.org/10.1016/b978-081551371-1.50009-3" @default.
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