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- W4242436019 abstract "Publisher SummaryThis chapter serves as an introduction to solar cell technology, including crystal growth, diffusion, ion implantation, antireflective coatings, and Ohmic contacts. Crystal growth methods for Si substrates include the Czochralski , FZ, and ribbon-growth techniques, while for GaAs substrates the horizontal Bridgman method is most often used. All of these techniques involve growth by controlled freezing at a solid–liquid interface. Dopants can be added directly to the molten Si or GaAs, and will be incorporated into the growing solid in accordance with the segregation coefficient. Boron and phosphorus are the dopants most often used for Si; and Se, Te, or Si is most often used for n-type GaAs. Ion implantation as a solar cell fabrication technique has the advantage that shallow junctions with high surface concentrations can easily be obtained, and the doping profile in the top region can be tailored to produce an aiding drift field. The disadvantage is that the lattice damage produced by the implantation is difficult to anneal, and low open circuit voltages are therefore usually obtained." @default.
- W4242436019 created "2022-05-12" @default.
- W4242436019 date "1975-01-01" @default.
- W4242436019 modified "2023-10-18" @default.
- W4242436019 title "Chapter 9 Solar Cell Technology" @default.
- W4242436019 doi "https://doi.org/10.1016/s0080-8784(08)62365-0" @default.
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