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- W4242696757 abstract "The hot carried degradation in a metal oxide semiconductor device has been one of the most serious concerns for MOS-ULSI. In this paper, three types of LDD(lightly doped drain) structure for suppression of hot carried degradation, such as decreasing of performance due to spacer-induced degradation and increase of series resistance will be investigated. in this study, LDD-nMOSFETs used had three different drain structure, (1) conventional surface type LDD(SL), (2) Buried type LDD(BL), (3) Surface implantation type LDD(SI). As experimental results, the surface implantation the LDD structure showed that improved hot carrier lifetime to comparison with conventional surface and buried type LDD structures." @default.
- W4242696757 created "2022-05-12" @default.
- W4242696757 date "2002-01-01" @default.
- W4242696757 modified "2023-09-25" @default.
- W4242696757 title "A Study on New LDD Structure for Improvements of Hot Carrier Reliability" @default.
- W4242696757 doi "https://doi.org/10.4313/jkem.2002.15.1.001" @default.
- W4242696757 hasPublicationYear "2002" @default.
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