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- W4242800645 abstract "Epitaxial growth of thin vanadium sesquioxide (V2O3) films on c-plane sapphire (c-Al2O3) substrates was achieved with reactive magnetron sputtering under restricted oxygen flow. Even with a film thickness of approximately 12 nm, highly c-axis textured growth of corundum V2O3 was realized because of the smaller mismatch of V2O3 against corundum Al2O3. Post annealing in O2 atmosphere for as-grown V2O3 films caused phase transformation to oxidized crystalline phases. At a moderate annealing temperature of 450 °C, the V2O3 thin films transformed to VO2 films, which show a resistivity change of over three orders of magnitude. The X-ray photoelectron spectroscopy spectra for the annealed VO2 film showed a single charge state of V4+, indicating a homogeneous crystalline structure, in contrast to the inhomogeneous feature with mixed charge states of V in addition to V3+ for as-grown V2O3 film. This method is promising to prepare thin VO2 films with metal–insulator transition in productive reactive sputtering and to examine crystalline phase transformation mechanisms, including phase coexistence." @default.
- W4242800645 created "2022-05-12" @default.
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- W4242800645 date "2011-06-01" @default.
- W4242800645 modified "2023-09-26" @default.
- W4242800645 title "Epitaxial Growth of V2O3Thin Films onc-Plane Al2O3in Reactive Sputtering and Its Transformation to VO2Films by Post Annealing" @default.
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- W4242800645 doi "https://doi.org/10.7567/jjap.50.065803" @default.
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