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• W4243006872 abstract "A micro-electro mechanical system (MEMS) technology has been developed with the integrated circuit (IC) technology. Buried channels in large-scale integration will first be described before the buried channel in MEMS. The buried channel can be vacuum sealed, and wafers with the silicon on nothing (SON) structure can be the starting material for IC. Many types of practical MEMS devices, especially sensors, can be designed based on the fabrication process. The SON is especially useful for applications of pressure sensors because the basic structure involving a diaphragm with a vacuum cavity is directly applicable to the pressure-sensing mechanism. The chapter discusses the concept and the applications of silicon monolithic buried cavity or channel in the MEMS technology utilizing hydrogen annealing. The SON technology can be realized using simple process steps: only one lithography with etching and hydrogen annealing." @default.
• W4243006872 created "2022-05-12" @default.
• W4243006872 creator A5008494460 @default.
• W4243006872 date "2021-04-23" @default.
• W4243006872 modified "2023-09-23" @default.
• W4243006872 title "Buried Channels in Monolithic Si" @default.
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• W4243006872 doi "https://doi.org/10.1002/9783527823239.ch19" @default.
• W4243006872 hasPublicationYear "2021" @default.
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