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• W4243213990 startingPage "064101" @default.
• W4243213990 abstract "We report current-driven crystallization in a TiSi3/Ge2Sb2Te5/TiN vertical cell, which can be well controlled and is expected to be applied to multilevel storage with a low threshold voltage of about 1 V. We demonstrate that the number of distinct resistance levels can readily reach 8 and even higher. These levels in this study result from the initial threshold switching and the subsequent current-controlled crystallization induced by Joule heating. The latter allows the creation of many distinct levels, thus enabling the low-cost ultrahigh-density nonvolatile memory." @default.
• W4243213990 created "2022-05-12" @default.
• W4243213990 creator A5021834874 @default.
• W4243213990 creator A5023409007 @default.
• W4243213990 date "2012-06-01" @default.
• W4243213990 modified "2023-10-14" @default.
• W4243213990 title "Controllable Crystallization in Phase-Change Memory for Low-Power Multilevel Storage" @default.
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• W4243213990 doi "https://doi.org/10.7567/jjap.51.064101" @default.
• W4243213990 hasPublicationYear "2012" @default.
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