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- W4243283003 abstract "Charge-trap-type memory device employing oxide-semiconductor charge-trap layers (CTL), such as ZnO and In-Ga-Zn-O (IGZO), have been intensively investigated for nonvolatile memory TFT applications [1]. Although encouraging device characteristics could be obtained for the proposed memory TFT, they can be expected to be far improved by using nano-particle (NP) mono-layers as alternative CTLs thanks to their isolated structures. So far, various methods such as spray pyrolysis and high-temperature-assisted self-assembly have been suggested to form discrete NP mono-layers [2]. However, low controllability in areal density of NPs and high process temperature limit device performance as well as process compatibility on flexible substrate." @default.
- W4243283003 created "2022-05-12" @default.
- W4243283003 date "2016-01-01" @default.
- W4243283003 modified "2023-10-17" @default.
- W4243283003 title "Formation of ZnO Nanoparticles by Atomic Layer Deposition for the Nonvolatile Memory Thin-Film Transistor Applications" @default.
- W4243283003 doi "https://doi.org/10.1149/ma2016-02/33/2159" @default.
- W4243283003 hasPublicationYear "2016" @default.
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