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- W4243361974 abstract "SiGe/Si heterostructures have been fabricated using germanium ion implantation into silicon and subsequent solid phase epitaxy (SPE) growth. The damage removal and boron diffusion in the SiGe/Si heterostructures formed by high-dose Ge+ preamorphized and BF2+ implanted Si(0 0 1) during SPE growth have been investigated by double-crystal X-ray diffraction (DCXRD) and secondary ion mass spectrometry (SIMS). The results show that annealing at 600°C for 60 min can only remove a little damage induced by implantation and nearly no redistribution of Ge and B atoms has occurred during the annealing. Most damage induced by Ge+ and BF2+ ion implantation have been removed after annealing at 950°C for 60 min and accompanied by Ge diffusion, a boron diffusion has taken place. When annealing temperature rose to 1050°C, Ge diffusion has been slight while B diffusion has been deeper into the Si substrate with a very good distribution. The X-ray diffraction (0 0 4) rocking curves from the samples annealed at 1050°C for 60 min display two SiGe peaks, which may be related to the B and Ge concentration profiles." @default.
- W4243361974 created "2022-05-12" @default.
- W4243361974 date "1989-01-01" @default.
- W4243361974 modified "2023-09-25" @default.
- W4243361974 title "Enhanced elimination of implantation damage upon exceeding the solid solubility" @default.
- W4243361974 doi "https://doi.org/10.1016/0042-207x(89)90415-6" @default.
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