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- W4244600805 abstract "For a Si hole inversion layer the parameters for phonon and surface roughness scattering, which are shown in Table 12.1, have been obtained by matching the simulation results to the long-channel low-field mobility measurements for bulk Si PMOSFETs from Takagi [5] at three lattice temperatures 223, 300, and 443 K shown in Fig. 12.1 (top). As in [3, 4], a phonon energy of ℏω = 61. 2 meV was used and kept fixed in this work. The other four scattering parameters were considered as adjustable parameters and their values were extracted by the fitting procedure. The Levenberg-Marquardt least square fitting algorithm [6, 7] was employed and the parameter set of Fischetti in [2] was chosen for initial values. The optimum scattering parameters after fitting are still in good agreement with the ones of Fischetti in [2]. After calibration, all scattering parameters are kept fixed for all simulations. Figure 12.1 (top) shows that the calculated channel mobility fits well the long channel low-field mobility measurements of Takagi [5]." @default.
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- W4244600805 date "2011-01-01" @default.
- W4244600805 modified "2023-09-25" @default.
- W4244600805 title "Results" @default.
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- W4244600805 doi "https://doi.org/10.1007/978-3-7091-0778-2_12" @default.
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